Titanium Silicide TiSi2 Pulp
Among the many metal silicides, such as TiSi2, NiSi2, CoSi2, WSi2, TaSi2, MoSi2, MoSi2, MoSi2, MoSi2, MoSi2, MoSi2, MoSi2, MoSI2, and CoSi2, titanium silicide has excellent properties. These include high electrical conductivity. high selectivity. good Si adsorption. Good process adaptability.
|Titanium Silicide TiSi2 Pulp Properties|
|Other names||TiSi2 powder, titanium disilicide|
|Melting Point||1470 degC|
|Solubility of H2O||N/A|
What is Si?
Silicon (atomic symbol Si; atomic number fourteen) is an element in the Period 3 unit P with an atomic mass 28.085. Silicium, which is 25.7 per cent of the earth’s crust, is the second-most abundant element after oxygen. These metals rarely occur in their pure crystal form. They are typically made from an iron/silicon alloy called ferrosilicon. Element Silicon, also known as silicon dioxide, is the main ingredient of glass. This is one the most cost-effective materials. It has excellent mechanical and optical properties, as well as thermal and electrical properties. You can dope ultra-pure silica with boron (or gallium), phosphorus (or arsenic) to make silicon. Silicon is used in solar cells, rectifiers and other solid state devices that are widely used in electronics.
What is Ti?
Titanium, also known as atomic symbol Ti and atomic number 22, is an element in the group D of the 4th periodic with an atomic weight of 47.867. The basic form of titanium is silver-gray with a metallic appearance. Titanium is chemically similar to zirconium. This metal has the exact same number of electrons as titanium and is part of the same periodic table group. There are five naturally-occurring isotopes for titanium, 46Ti to 48Ti. The most abundant (73.8%) is 48Ti. Titanium can be found in igneous rocks as well as its sediments.
Methods of producing Titanium Silicide TiSi2 Pulver
By reacting titanium hydride or titanium with silicon, you can prepare titanium disilicide.
Ti + Ti 2Si -TiSi2
It can also be ignited using aluminum powder, titanium dioxide, sulfur, silicon dioxide or potassium HexafluortitanateK2TiF6, electrolysis of a mixture of potassium hexafluortitanateand titanium dioxide, or titanium tetrachloride.
Another option is to react titanium trichloride with silane, diclosilane, and silicon.
TiCl4 + 2SiH4 – TiSi2 + 4HCl + 2H2
TiCl4 + 2SiH2Cl2 + 2H2 – TiS2 + 8HCl
TiCl4 + 3Si – TiSi2 + SiCl4
Titanium Silicide TiSi2 Pulp
In the semiconductor industry, titanium silicide is used. It is grown on silicon and other polysilicon wires with self-aligning Silicide technology. This reduces the thin layer resistance to local transistor connections. It is most commonly used in the microelectronics industry at the C54 stage.
The source, gate, leak contacts and local interconnections of CMOS integrated Circuits are all made from titanium silicide. These applications require that the titanium-silicide phase is low in resistivity (20m o –cm) and doesn’t agglomerate under high-temperature treatment. For electronic applications, the Ti/Si System has two silicide layers: C49-TiSi2 with high resistivity (60-70m o.-cm) at 600-700°C and C54-TiSi2 with low resistivity (15-20m o.-cm), at 700-850°C.
Titanium Silicide TiSi2 Pulver is Main Supplier
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