Inorganic gallium nitride has the chemical formula GaN. It is made up of nitrogen and gallium. Since 1990 it is used widely in light-emitting devices. This compound is a wurtzite-like material with high hardness. Gallium Nitride has an energy gap of about 3.4 electron-volts. This can be useful in high-speed, high-power optoelectronic components. Gallium nitride is used, for instance, in violet lasers. You can use it without nonlinear semi-conductor pumped solid state lasers.
In 2014, Yuki Akasaki, Professor of Nagoya University in Japan as well as Hiroshi Amao, Professor of Nagoya University in Japan won the Nobel Prize in Physics. Shuji Nakamura, a professor at the University of California Santa Barbara was also awarded the prize.
GaN series has low heat production rate and high electric breakdown field. They are important materials for developing high-temperature and high power electronic devices, as well high-frequency microwave devices.
GaN materials are ideal for light-emitting devices with short wavelengths. GaN, and its alloys, cover a wide range of spectral wavelengths from red through to ultraviolet.
GaN is the current frontier and focus of semiconductor research. This is a new semiconductor material used for microelectronics and optoelectronics. Along with other semiconductor materials, such as SIC or diamond, this material is referred to as the successor generation of Ge and Si.
Semiconductor material, second-generation GaAs materials, InP compounds semiconductor materials and third generation semiconductor materials. It has a wide bandgap and strong atomic bonds. It also has high thermal conductivity (nearly uncorroded by acid) as well as strong radiation resistance. It’s used in photoelectronics and devices that require high temperatures and power.
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