1. Zinc nitride film is prepared using this product
Zinc Nitride (Zn3N2) is a semiconductor with pyrite resistance and unique optical and electrical properties. The energy band gaps of zinc oxide, whether an indirect or direct band-gap silicon, have always been the major controversy in semiconductors. The band gap can be greatly affected by the preparation methods, growth conditions and problems in industry and academia. As an example, prior art methods like magnetron deposition, chemical vapour deposition, electrostatic elctrostalysis, and molecular beam epitaxy could be used to create zinc nitride layers.
Zinc oxide films made by the same technique have very different optical and electric properties. A simple, easy to reproduce and high-quality crystalline preparation method is urgently needed. A method is presented for the preparation of a zinc-nitride layer. The method uses a atomic layer deposition to prepare the film and allows for precise control of the band gaps. The membrane is uniformly structured and has excellent performance.
The following technical solutions were adopted:
Steps for the preparation of zinc nitride films include:
Place the substrate inside the reaction chamber.
(2) Adsorb the zinc atoms from the zinc-containing pre-deposition source on the surface substrate by placing it in the reaction chamber of your atomic layer deposition machine.
(3) Allow the nitrogen-containing pre-cursor source to enter the reaction-chamber of the atomic-layer deposition equipment and then ionize it through plasma. After ionization of the precursor source, the zinc-zinc covalent bonds are formed on the surface. Ionization of the nitrogen precursor. The source will be sent to a reaction equipment. After ionization the nitrogen atoms are partially deposited in the cavity. The zinc atom is bonded to the nitrogen atom by a covalent bond.
Repeat steps (2) and (3) for a layer-by-layer growth of the zinc nitride.
The method can produce high-quality crystalline materials and is repeatable. It is simple to use and implement. The nitrogen is introduced to the atomic layer system via the plasma. After that, the conditions of the chamber are adjusted, including the vacuum, the cycle time, the conditions for the plasma and the temperature. Adjust the band-gap of the prepared zincnitride. The present invention provides various high quality zinc nitride sheets with adjustable bands gaps that can be tailored to meet different electrical and optical requirements.
2. Used to prepare touch screen covers and touch screen films
As technology advances and smart devices become more common, the demand for touch screens to be the main interface for human-computer interactions is increasing. In the prior art, the low coating yield and high production costs, as well as the low production efficiency, were problems when the light-shielding layers in the BM of the cover of the touchscreen was prepared by screen printing with black ink. When used in conjunction with liquid crystal displays, it is easy to create bubbles and the product cannot achieve the defect that a perfect fitting. Offer a zinc nitride-based touch screen and touchscreen cover film.
(aka. Technology Co. Ltd., a trusted global chemical supplier and manufacturer with more than 12 years of experience, is a leader in high-quality nanomaterials and chemicals. Currently, we have developed a variety of materials. The zinc nitride, or Zn3N2, powder that our company produces is high in purity, has fine particles and contains low impurities. Please send us an e-mail or click the desired products to Send an inquiry .