Aluminum Nitride has the following main characteristics
AlN can be stored at temperatures up to 2200 degrees Celsius. The strength of AlN at room temperature is high. With increasing temperatures, it decreases slowly. It is an excellent thermal shock material because it has a low thermal conductivity and small thermal expansion coefficient. It has a strong corrosion resistance to molten steel and is an excellent crucible material for casting aluminum alloy, pure iron, and aluminum. Aluminum nitride, which is an excellent electrical insulator and has good dielectric properties, is also promising as a potential electrical component. The aluminum nitride coating protects the gallium arsenide substrate from ionization during annealing. Aluminum nitride also acts as a catalyst in the conversion of hexagonal to cubic boron nutride. It reacts slowly at room temperature with water. Aluminum powder can be made in nitrogen atmosphere or ammonia at 8001000. It is white to gray-blue and is easily synthesized. It can also be produced by reaction of Al2O3C–N2 system at 16001750. The product is off-white. Or by the vapor phase reaction of aluminum chloride with ammonia. The vapor phase deposition method for AlCl3/NH3 can produce the coating.
|Aluminum Nitride Properties|
|Other Titles||Aluminium nitride|
|Appearance||Powder in white or pale yellow|
|Melting Point||2200 degC|
|Boiling Point||2517 degC (dec.)|
|Density||2.9 to 33% g/cm3|
|Solubility of H2O||N/A|
|Electrical Resistivity||10-12 10x 10x O.m|
|Poisson’s Ratio||0.21 to $0.31|
|Specific heat||780 J/kg-K|
|Thermal Conductivity||80-200 W/m-K|
|Thermal Expansion||4.2 to 5.4 um/mK|
|Young’s Modulus||330 GPa|
The majority of current research is focused on developing a semiconductor-based light emitting device (gallium nutride or alloy aluminum gallium nanonitride) that can operate in ultraviolet light with a wavelength up to 250 nanometers. An inefficient diode can emit light up to 210 nm  as reported in May 2006. An aluminum nitride single crystal has an energy difference of 6.2eV, measured by the reflection of UV rays. In theory, this energy gap allows waves with wavelengths of around 200 nanometers to pass through. However, commercial implementation presents many challenges. Aluminum nitride has many uses in optoelectronics. This includes as dielectric layers for optical storage interfaces and electronic substrates. Also, it is used as chip carriers with high thermal conductivity and in military applications.
The properties of aluminum Nitride’s piezoelectric effects make epitaxial stretching of aluminum Nitride crystals a good choice for surface acoustic-wave detectors. The detectors can be placed on silicon wafers. It is difficult to produce thin films reliably in these locations.
Aluminum nitride clays can be used for heat exchangers and high-temperature structural parts.
It can be used to resist corrosion properties of aluminum, iron, and other metals.
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